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AEM Deposition
  • Technical Infomation
  •  
  • Material Deposition Chart
    •
  • Converting Pressures Units
    •

    Key of Symbols

    ? Magnetic material (requires special sputter source)

    ‡ One run only

    * Influenced by composition

    ** The z-ratio is unknown. Therefore, we recommend using 1.00 or an experimentally

    determined value. Please click here for instructions on how to determine this value.

    *** All metals alumina coated

    C = carbon Ex = excellent PDC = Pulsed DC sputtering
    Gr = graphite G = good RF = RF sputtering is effective
    Q = quartz F = fair RF-R = reactive RF sputter is effective
    Incl = Inconel® P = poor DC = DC sputtering is effective
    VitC = vitreous carbon S = sublimes DC-R = reactive DC sputtering is effective
    SS = stainless steel D = decomposes  
     
    Material Symbol Melting Point(°C) Density
    g/cm3    		 Temp.(°C) for Given Vap. Press. (Torr) E-Beam Evaporation Thermal Evaporation Sputter Comments
    10-6 10-4 10-2 Suitability Liner Material Boat Coil Basket Crucible
    Aluminum Arsenide AlAs 1600 3.7 - ~1,300 - - - - - - - RF -
    Aluminum Bromide AlBr3 97 2.64 - - ~50 - - Mo - - Gr - -
    Aluminum Carbide Al4C3 ~1,400 2.36 - - ~800 Fair - - - - - RF -
    Aluminum Fluoride AlF3 1291 2.88 410 490 700 Poor Graphite, Fabmate® Mo, W, Ta - - Gr RF -
    Aluminum Nitride AlN >2,200 3.26 - - ~1750 Fair - - - - - RF-R Decomposes. Reactive evap in 10-3 T N2 with glow discharge.
    Aluminum Oxide Al 2O 3 >2,072 3.97 - - 1550 Excellent Fabmate®, Tungsten W - W - RF-R Sapphire excellent in E-beam; forms smooth, hard films.
    Aluminum Phosphide AlP >2,000 2.42 - - - - - - - - - RF -
    Aluminum, 1% Coppe Al/Cu 99/1 wt% >640 2.82 - - - - - - - - - DC Wire feed & flash. Difficult from dual sources.
    Aluminum, 1% Silicon Al/Si 99/1 wt % >640 2.69 - - 1010 Fair - - - - TiB2-BN RF, DC Wire feed & flash. Difficult from dual sources.
    Antimony Sb 630 6.68 279 345 425 Poor - Mo*** Ta*** Mo, Ta Mo, Ta BN, C, Al 2O 3 RF, DC Evaporates well.
    Antimony Oxide Sb 2O 3 656 5.2 - - ~300 Good - - - - BN,Al 2O 3 RF-R Decomposes on W.
    Antimony Selenide Sb 2Se 3 611 - - - -   - Ta - - C RF Stoichiometry variable.
    Antimony Sulfide Sb 2S 3 >550 4064 - - ~200 Good Molybdenum, Tantalum Mo, Ta - Mo, Ta Al 2O 3 - No decomposition
    Antimony Telluride Sb 2Te 3 >629 6.5 - - 600 - - - - - C RF Decomposes over 750°C.
    Arsenic As >817 5.73 107 150 210 Poor Fabmate® C - - Al 2O 3 - Sublimes rapidly at low temp. Not recommended for sputtering.
    Arsenic Oxide As 2O 3 >312 3.74 - - - - - - - - - - -
    Arsenic Selenide As 2Se 3 ~360 4.75 - - - - - - - - Al 2O 3,Q RF -
    Arsenic Sulfide As 2S 3 300 3.43 - - ~400 Fair - Mo - - Al 2O 3,Q RF -
    Arsenic Telluride As 2Te 3 >362 6.5 - - - - - Flash - - - - See JVST. 1973, 10:748
    Barium Ba >725 3.51 545 627 735 Fair - W,Ta,Mo W W Metals RF Wets without alloying, reacts with ceramics. Not recommended for sputtering.
    Barium Chloride BaCl 2 963 3.92 - - ~650 - - Ta,Mo - - - RF Preheat gently to outgas.
    Barium Fluoride BaF 2 1355 4.89 - - ~700 Good Molybdenum Mo - - - RF -
    Barium Oxide BaO 1918 5.72 - - ~1300 Poor - - - - Al 2O 3 RF,RF-R Decomposes slightly.
    Barium Sulfide BaS 1200 4.25 - - 1100 - - Mo - - - RF -
    Barium Titanate BaTiO 3 1625 6.02 - - - - - - - - - RF Gives Ba. Co-evap and Sputter OK.
    Beryllium Be 1278 1.85 710 878 1000 Excellent Graphite, Fabmate® W,Ta W W C DC Wets W/Mo/Ta. Evaporates easily
    Beryllium Carbide Be 2C >2100 1.9 - - - - - - - - - - -
    Beryllium Chloride BeCl2 405 1.9 - - ~150 - - - - - - RF -
    Beryllium Fluoride BeF2 800 1.99 - - ~200 Good - - - - - - -
    Beryllium Oxide BeO 2530 3.01 - - 1900 Good - - - W - RF,RF-R No decomposition from E-beam guns.
    Bismuth Bi 271 9.8 330 410 520 Excellent Fabmate®, Graphite W, Mo, Ta W W Al 2O 3 DC Resistivity high. Low Melting Point materials not ideal for sputtering.
    Bismuth Fluoride BiF3 727 5.32 - - ~300 - - - - - Gr RF -
    Bismuth Oxide Bi2O3 860 8.55 - - ~1400 Poor - - - - - RF,RF-R -
    Bismuth Selenide Bi 2Se3 710 6.82 - - ~650 Good - - - - Gr,Q RF Co-evap from 2 sources or sputter.
    Bismuth Sulfide Bi 2S3 685 7.39 - - - - - - - - - RF -
    Bismuth Telluride Bi 2Te3 573 7.7 - - ~600 - - W,Mo - - Gr,Q RF Co-evap from 2 sources or sputter.
    Bismuth Titanate Bi 2Ti 2O 7 870 - - - - - - - - - - RF Sputter or co-evap from 2 sources in 10-2 Torr O2.
    Boron B 2079 2.34 1278 1548 1797 Excellent Fabmate®, Graphite C - - C RF Explodes with rapid cooling. Forms carbide with container.
    Boron Carbide B 4C3 2350 2.52 2500 2580 2650 Excellent Fabmate®, Graphite - - - - RF Similar to chromium.
    Boron Nitride BN ~3000 2.25 - - ~1600 Poor - - - - - RF,RF-R Decomposes when sputtered. Reactive preferred.
    Boron Oxide B 2O3 ~450 1.81 - - ~1400 Good Molybdenum Mo - - - - -
    Boron Sulfide B 2S3 310 1.55 - - 800 - - - - - Gr RF -
    Cadmium Cd 321 8.64 64 120 180 Poor - W,Mo,Ta - W,Mo,Ta Al 2O 3,Q DC,RF Bad for vacuum systems. Low sticking coefficient.
    Cadmium Antimonide Cd3Sb 2 456 6.92 - - - - - - - - - - -
    Cadmium Arsenide Cd3As 2 721 6.21 - - - - - - - - Q RF -
    Cadmium Bromide CdBr2 567 5.19 - - ~300 - - - - - - - -
    Cadmium Chloride CdCl2 568 4.05 - - ~400 - - - - - - - -
    Cadmium Fluoride CdF2 1100 6.64 - - ~500 - - - - - - RF -
    Cadmium Iodide CdI2 387 5.67 - - ~250 - - - - - - - -
    Cadmium Oxide CdO >1500 6.95 - - ~530 - - - - - - RF-R Disproportionates.
    Cadmium Selenide CdSe >1350 5.81 - - 540 Good Molybdenum, Tantalum Mo, Ta - - Al 2O 3,Q RF Evaporates easily.
    Cadmium Sulfide CdS 1750 4.82 - - 550 Fair - W,Mo,Ta - W Al 2O 3,Q RF Sticking coefficient affected by substrate.
    Cadmium Telluride CdTe 1092 5.85 - - 450 - - W,Mo,Ta W W,Ta,Mo - RF Stoichiometry depends on substrate temp. n~2.6.
    Calcium Ca 839 1.54 272 357 459 Poor - W W W Al2O3, Q - Corrodes in air.
    Calcium Silicate CaSiO3 1540 2.91 - - - Good - - - - Q RF -
    Calcium Tungstate CaWO4 1200 6.06 - - - Good - W - - - RF -
    Cerium (III) Oxide Ce2O3 1692 6.86 - - - Fair - W - - - - Alloys with source. Use 0.015"–0.020" W boat.
    Cerium (IV) Oxide CeO2 ~2,600 7.13 1890 2000 2310 Good Tantalum, Graphite, Fabmate® W - - - RF, RF-R Very little decomposition.
    Cerium Fluoride CeF3 1460 6.16 - - ~900 Good Tungsten, Tantalum, Molybdenum W, Mo, Ta - Mo, Ta - RF Preheat gently to outgas. n~1.7.
    Cesium Cs 28 1.88 -16 22 80 - - - - - Q - -
    Cesium Bromide CsBr 636 3.04 - - ~400 - - W - - - RF -
    Cesium Chloride CsCl 645 3.99 - - ~500 - - W - - - RF -
    Cesium Fluoride CsF 682 4.12 - - ~500 - - W - - - RF -
    Cesium Hydroxide CsOH 272 3.68 - - 550 - - - - - - - -
    Cesium Iodide CsI 626 4.51 - - ~500 - - W - - Q RF -
    Chiolite Na5Al3F14 735 2.9 - - ~800 - - Mo, W - - - RF -
    Chromium Cr 1857 7.2 837 977 1157 Good Fabmate®, Graphite, Tungsten Cr Plated W Rods W W VitC DC Films very adherent. High rates possible.
    Chromium Boride CrB 1,950-2,050 6.17 - - - - - - - - - RF -
    Chromium (II) Bromide CrBr2 842 4.36 - - 550 - - - - - - RF -
    Chromium Carbide Cr3C2 1895 6.68 - - ~2,000 Fair - W - - - RF -
    Chromium Chloride CrCl2 824 2.88 - - 550 - - Fe - - - RF -
    Chromium Oxide Cr2O3 2266 5.21 - - ~2,000 Good - W, Mo - W - RF, RF-R Disproportionates to lower oxides; reoxidizes at 600°C in air.
    Chromium Silicide CrSi2 1490 5.5 - - - - - - - - - RF -
    Chromium-Silicon Monoxide Cr-SiO - * * * * Good - W - W - RF Flash evaporate.
    Cobalt † Co 1495 8.9 850 990 1200 Excellent Direct in Hearth W, Nb - W Al2O3 DC Alloys with W/Ta/Mo.
    Cobalt Bromide CoBr2 678 4.91 - - 400 - - - - - - RF -
    Cobalt Chloride CoCl2 724 3.36 - - 472 - - - - - - RF -
    Cobalt Oxide CoO 1795 6.45 - - - - - - - - - DC-R, RF-R Sputtering preferred.
    Copper Cu 1083 8.92 727 857 1017 Excellent Graphite, Molybdenum Mo, W W W Al2O3, Mo, Ta DC Adhesion poor. Use interlayer (Cr). Evaporates using any source material.
    Copper Chloride CuCl 430 4.14 - - ~600 - - - - - - RF -
    Copper Oxide Cu2O 1235 6 - - ~600 Good Graphite, Fabmate®, Tantalum Ta - - Al2O3 DC-R, RF-R -
    Copper Sulfide Cu2S 1100 5.6 - - - - - - - - - - -
    Cryolite Na3AlF6 1000 2.9 1020 1260 1480 Excellent Fabmate®, Tungsten W, Mo, Ta - W, Mo, Ta VitC RF Large chunks reduce spitting. Little decomposition.
    Dysprosium Dy 1412 8.55 625 750 900 Good Direct in Hearth Ta - - - DC -
    Dysprosium Fluoride DyF3 1360 - - - ~800 Good - Ta - - - RF -
    Dysprosium Oxide Dy2O3 2340 7.81 - - ~1,400 - - - - - - RF, RF-R Loses oxygen.
    Erbium Er 1529 9.07 650 775 930 Good Tungsten, Tantalum W, Ta - - - DC -
    Erbium Fluoride ErF3 1350 7.82 - - ~750 - - Mo - - - RF See JVST. 1985; A3(6):2320.
    Erbium Oxide Er2O3 2350 8.64 - - ~1,600 - - - - - - RF, RF-R Loses oxygen.
    Europium Eu 822 5.24 280 360 480 Fair - W, Ta - - Al2O3 DC Low Ta solubility.
    Europium Fluoride EuF2 1380 6.5 - - ~950 - - Mo - - - RF -
    Europium Oxide Eu2O3 2350 7.42 - - ~1,600 Good - Ta, W - - ThO2 RF, RF-R Loses oxygen. Films clear and hard.
    Europium Sulfide EuS - 5.75 - - - Good - - - - - RF -
    Gadolinium † Gd 1313 7.9 760 900 1175 Excellent Direct in Hearth Ta - - Al2O3 DC High Ta solubility
    Gadolinium Carbide GdC2 - - - - 1500 - - - - - C RF Decomposes under sputtering.
    Gadolinium Oxide Gd2O3 2330 7.41 - - - Fair - - - - - RF, RF-R Loses oxygen.
    Gallium Ga 30 5.9 619 742 907 Good Fabmate® - - - Al2O3, Q - Alloys with W/Ta/Mo. Use E-beam gun. Low Melting Point materials not ideal for sputtering.
    Gallium Antimonide GaSb 710 5.6 - - - Fair - W, Ta - - - RF Flash evaporate.
    Gallium Arsenide GaAs 1238 5.3 - - - Good Graphite, Fabmate® W, Ta - - C RF Flash evaporate.
    Gallium Nitride GaN 800 6.1 - - ~200 - - - - - Al2O3 RF, RF-R Evaporate Ga in 10-3Torr N2.
    Gallium Oxide Ga2O3 1900 6.44 - - - - - W - - - RF Loses oxygen.
    Gallium Phosphide GaP 1540 4.1 - 770 920 - - W, Ta - W Q RF Does not decompose. Rate control important.
    Germanium Ge (N-type) 937 5.35 812 957 1167 Excellent Fabmate®, Graphite W, C, Ta - - Q, Al2O3 DC Excellent films from E-beam.
    Germanium (II) Oxide GeO 700 - - - 500 - - - - - Q RF -
    Germanium (III) Oxide GeO2 1086 6.24 - - ~625 Good Fabmate®, Tantalum, Molybdenum Ta, Mo - W, Mo Q, Al2O3 RF-R Similar to SiO; film predominantly GeO.
    Germanium Nitride Ge3N2 450 5.2 - - ~650 - - - - - - RF-R Sputtering preferred.
    Germanium Telluride GeTe 725 6.2 - - 381 - - W, Mo - W Q, Al2O3 RF -
    Glass, Schott® 8329 — 1300 2.2 - - - Excellent - - - - - RF Evaporable alkali glass. Melt in air before evaporating.
    Gold Au 1064 19.32 807 947 1132 Excellent Fabmate®, Molybdenum W*** Mo*** W - - Al2O3, BN DC Films soft; not very adherent.
    Hafnium Hf 2227 13.31 2160 2250 3090 Good - - - - - DC -
    Hafnium Boride HfB2 3250 10.5 - - - - - - - - - DC, RF -
    Hafnium Carbide HfC ~3,890 12.2 - - ~2,600 - - - - - - RF -
    Hafnium Nitride HfN 3305 13.8 - - - - - - - - - RF, RF-R -
    Hafnium Oxide HfO2 2758 9.68 - - ~2,500 Fair Direct in Hearth - - - - RF, RF-R Film HfO.
    Hafnium Silicide HfSi2 1750 7.2 - - - - - - - - - RF -
    Holmium Ho 1474 8.8 650 770 950 Good - W, Ta W W - - -
    Holmium Fluoride HoF3 1143 7.68 - - ~800 - - - - - Q DC, RF -
    Holmium Oxide Ho2O3 2370 8.41 - - - - - - - - - RF, RF-R Loses oxygen.
    Inconel® Ni/Cr/Fe 1425 8.5 - - - Good Fabmate®, Tungsten W W W - DC Use fine wire wrapped on W. Low rate required for smooth films.
    Indium In 157 7.3 487 597 742 Excellent Fabmate®, Graphite, Molybdenum W, Mo - W Gr, Al2O3 DC Wets W and Cu. Use Mo liner. Low Melting Point materials not ideal for sputtering.
    Indium (I) Oxide In2O ~600 6.99 - - 650 - - - - - - RF Decomposes under sputtering.
    Indium (III) Oxide In2O3 850 7.18 - - ~1,200 Good - W, Pt - - Al2O3 - -
    Indium (I) Sulfide In2S 653 5.87 - - 650 - - - - - Gr RF -
    Indium (II) Sulfide InS 692 5.18 - - 650 - - - - - Gr RF -
    Indium (III) Sulfide In2S3 1050 4.9 - - 850 - - - - - Gr RF Film In2S.
    Indium (II) Telluride InTe 696 6.29 - - - - - - - - - - -
    Indium (III) Telluride In2Te3 667 5.78 - - - - - - - - - RF Sputtering preferred; or co-evaporate from 2 sources; flash.
    Indium Antimonide InSb 535 5.8 - - - - - W - - - RF Decomposes. Sputtering preferred; or co-evaporate.
    Indium Arsenide InAs 943 5.7 780 870 970 - - W - - - RF -
    Indium Nitride InN 1200 7 - - - - - - - - - - -
    Indium Phosphide InP 1070 4.8 - 630 730 - - W, Ta - W, Ta Gr RF Deposits are P rich.
    Indium Selenide In2Se3 890 5.67 - - - - - - - - - RF Sputtering preferred; or co-evaporate from 2 sources; flash.
    Indium Tin Oxide In2O3/SnO290/10 wt %