Sputtering Targets
Application Field | Materials | Manufacturing Method | Purpose of Use |
Electrode Materials | W (5N) | Powder sintering | Gate area |
Co(5N) | Melting method | Gate area | |
Ni(5N) | Melting method | Gate area | |
Ti(5N) | Melting method | Lynear, Barrier etc. | |
Various silicide(4N up) | Powder sintering | ||
Wiring Materials | Al(5N, 5N5) & Al alloy such as AlCu(5N, 5N5) | Vacuum melting method | Inter conect |
Cu(6N) | Melting method | Inter conect | |
Compound Semiconductor Materials | Au, Au alloy(4N) | Melting method | Wiring |
WSi(5N) | Powder sintering | Electrode | |
SiO2(4N,6N) | Artificial/ natural quartz | Insulating material | |
Mounting & Wiring | Al(5N, 5N5)& Al alloy(5N, 5N5) | Vacuum melting method | Wiring |
Cu(4N) | Melting method | Wiring | |
Cr(3N) | Powder sintering | Barriers | |
Precious metal materials | Melting method | Wiring | |
TiW(4N up) | Powder sintering | Barriers | |
Ni(4N) | Melting method | Barriers | |
Capacitor Materials | BST | Powder sintering | DRAM/thin film capacitors |
PZT | Powder sintering | FeRAM | |
Barrier Materials | Ti(4N5) | Melting method | |
TiW(4N up) | Powder sintering |
Target Material | Al-0.5mass%Cu | Ti | Cu | Ta | W |
Purity | 5N5up (Low-U, Th specifications) | 4N5up | 6Nup | 6Nup (Except for Nb and W) | 5N |
Backing Plate Material | Aluminum or copper alloy | Aluminum alloy | Aluminum alloy | Aluminum or copper alloy |
Aluminum alloy or copper alloy |
Bonding Method |
Electron beam welding, integrated part structure, or metal bonding |
Diffusion bonding | Diffusion bonding | Diffusion bonding | Metal bonding |