Vanadium Carbide Sputtering Targets (VC)
Material Type | Vanadium Carbide |
Symbol | VC |
Melting Point (°C) | 2,810 |
Theoretical Density (g/cc) | 5.77 |
Z Ratio | **1.00 |
Sputter | RF |
Type of Bond | Indium, Elastomer |
Vanadium Carbide Sputtering Targets
Vanadium Carbide Sputtering Targets Information
Vanadium Carbide Sputtering Targets
Purity: 99.5%;
Circular: Diameter <= 14 inch, Thickness >= 1mm;
Block: Length <= 32 inch, Width <= 12 inch, Thickness >= 1mm.
Bonding is recommended for these materials. Many materials have characteristics that are not amenable to sputtering, such as brittleness and low thermal conductivity. This material may require a special ramp up and ramp down procedures. This process may not be necessary for other materials. Targets that have low thermal conductivity are susceptible to thermal shock.
More Information on Vanadium Carbide Sputtering Targets
Applications• Chemical Vapor Deposition (CVD)• Physical Vapor Deposition (PVD) • Semiconductor • Optical |
Features• High purity• Custom sizes available |
Manufacturing Process• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate
• Cleaning and final packaging, Cleaned for use in vacuum, |
Options
• 99.5% minimum purity
• Smaller sizes also available for R&D applications
• Sputtering target bonding service
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