Zinc Oxide Substrate (ZnO)
Zinc Oxide Substrate
Zinc Oxide (ZnO) is an excellent GaN film substrate material. Its band-gap is in the 3.73eV with 60mev exciton binding energy at room temperature, making it an ultraviolet and visible light luminescent material. It's widely used in optoelectronics, UV devices, as well as high temperature and electronic energy devices.
Zinc Oxide Substrate Physical Properties
| Material | ZnO |
|---|---|
| Growth Method | MOCVD |
| Crystal Structure | Hexagonal |
| Lattice (A) | a=3.252, c=5.313 |
| Direction | <0001> 3.5 º |
| Density(g/cm3) | 5.7 g/cm3 |
| Hardness | 4.0 (Mohns) |
| Melting Point | 1975℃ |
| Thermal Expansion Coefficient (CTE) | 6.5 x 10^-6 /℃ along a axis 3.7 x 10^-6 /℃along c axis |
| Seebeck Coefficient | 1200 uV/K @ 300 ℃ |
| Thermal Conductivity | 0.006 Cal/cm/K |
| Optical Transmission | > 50% for 2mm thickness (wavelength 400nm ~ 600nm) |
Zinc Oxide Substrate Specifications
| Size | 25x25x0.5 mm, 10x10x0.5mm, 10x5x0.5 mm,5x5x0.5mm |
|---|---|
| Thickness | 0.5 mm |
| Crystal Orientation | <0001>、<11-20>、<10-10> |
| Polished | SSP or DSP |
| Redirection Precision | ±0.5° |
| Redirection the Edge | 2°（special in 1°） |
| Angle of Crystalline | Special size and orientation are available on demand. |
| Ra: | ≤5Å（5µm×5µm） |
Zinc Oxide Substrate Package
Packaged with class 100 clean bag or wafer container in a class 1000 clean room.
Related Products of Zinc Oxide Substrate
|
Magnetic Ferroelectricity Substrates |
Semiconductor Wafers |
|
|
GaN Thin Film Substrates |
Halide Substrates |
Ceramic Substrates |
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