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Carbon Sputtering Targets (C)

Material Type	Carbon
Symbol	C
Atomic Weight	12.0107
Atomic Number	6
Color/Appearance	Black, Non-Metallic
Thermal Conductivity	140 W/m.K
Melting Point (°C)	~3,652

Coefficient of Thermal Expansion	7.1 x 10-6/K
Theoretical Density (g/cc)	2.25
Z Ratio	3.26
Sputter	PDC
Max Power Density* (Watts/Square Inch)	80
Type of Bond	Indium, Elastomer
Comments	E-beam preferred. Arc evaporation. Poor film adhesion.

Carbon Sputtering Targets

Carbon (from Latin: carbo "coal") is a chemical element with symbol C and atomic number 6. It is nonmetallic and tetravalent-making four electrons available to form covalent chemical bonds. Three isotopes occur naturally, 12C and 13C being stable, while 14C is a radioactive isotope, decaying with a half-life of about 5,730 years. The atoms of carbon can bond together in different ways, termed allotropes of carbon. The best known are Graphite, Diamond, and Amorphous Carbon. The physical properties of carbon vary widely with the allotropic form.

Carbon Sputtering Targets Information

Carbon Sputtering Targets
Purity: 99.99%-99.999%;
Circular: Diameter <= 14 inch, Thickness >= 1mm;
Block: Length <= 32 inch, Width <= 12 inch, Thickness >= 1mm.

More Information on Carbon Sputtering Targets

Applications • Electronics • Semiconductor • Flat panel displays	Features • Competitive pricing • High purity • Grain refined, Engineered microstructure • Semiconductor grade
Manufacturing Process • Refining Three-layer electrolytic process • Melting and casting Electrical resistance furnace - Semi-continuous casting • Grain refinement Thermomechanical treatment • Cleaning and final packaging - Cleaned for use in vacuum Protection from environmental contaminants Protection during shipment	Options • 99.99% minimum purity • Carbide targets Boron Carbide, Hafnium Carbide, Molybdenum Carbide, Niobium Carbide, Silicon Carbide, Tantalum Carbide, Titanium Carbide, Tungsten Carbide, Vanadium Carbide, Zirconium Carbide Sputtering Targets • Sputtering target bonding service

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