Silicon Carbide Crystal (SiC)
Silicon Carbide Crystal
Silicon Carbide (SiC) single crystal has excellent thermal conductivity properties, high saturation electron mobility, and high voltage breakdown resistance. It is suitable for preparing high frequency, high power, high temperature, and radiation-resistant electronic devices.
Silicon Carbide Crystal Physical Properties
| Material | SiC |
|---|---|
| Growth Method | MOCVD |
| Crystal Structure | M6 |
| Lattice (A) | a=3.08, c=15.08 |
| Direction | <0001> 3.5 º |
| Density(g/cm3) | 3.21 g/cm3 |
| Hardness | 9.2(Mohns) |
| Melting Point | 1900℃ |
| Heat Travels @300K | 3-5 W/ m |
| Refractive Index | no=2.55 ne=2.59 |
Silicon Carbide Crystal Specifications
| Size | 10x3, 10x5, 10x10, 15x15, 20x15, 20x20 |
|---|---|
| Dia15, Dia 20, Dia 1'', Dia 2'', Dia 2.6'' | |
| Thickness | 0.35 mm |
| Crystal Orientation | ＜0001> |
| Polished | SSP or DSP |
| Redirection Precision | ±0.5° |
| Redirection the Edge | 2°（special in 1°） |
| Angle of Crystalline | Special size and orientation are available on demand. |
| Ra: | ≤5Å（5µm×5µm） |
Silicon Carbide Crystal Package
Packaged with class 100 clean bag in a class 1000 clean room.
Related Products of Silicon Carbide Crystal
|
Semiconductor Crystals |
Scintillation Crystals |
Photoelectric Crystals |
|
Infrared Crystals |
Laser Crystals |
Nonlinear Optical Crystals |
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