Tantalum Silicide Sputtering Targets (TaSi2)
Material Type | Tantalum Silicide |
Symbol | TaSi2 |
Color/Appearance | Grey, Solid |
Melting Point (°C) | 2,200 |
Theoretical Density (g/cc) | 9.14 |
Water Solubility | Insoluble |
Sputter | RF, RF-R, DC |
Type of Bond | Indium, Elastomer |
Comments |
Tantalum Silicide Sputtering Targets
Tantalum silicide (TaSi2) thin films are sputter deposited on P-type and N-type silicon substrates using VARIAN 3125 magnetron DC sputtering system with TaSi 2 target. AEM is specialized in producing high purity Tantalum Silicide Sputtering Targets with the highest possible density and smallest possible average grain sizes. This sputtering target is used in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications.
Tantalum Silicide Sputtering Targets Information
Tantalum Silicide Sputtering Targets
Purity: 99.5%;
Circular: Diameter <= 14 inch, Thickness >= 1mm;
Block: Length <= 32 inch, Width <= 12 inch, Thickness >= 1mm.
Bonding is recommended for these materials. Many materials have characteristics that are not amenable to sputtering, such as brittleness and low thermal conductivity. This material may require a special ramp up and ramp down procedures. This process may not be necessary for other materials. Targets that have low thermal conductivity are susceptible to thermal shock.
More Information on Tantalum Silicide Sputtering Targets
Applications
• Chemical Vapor Deposition (CVD) • Optical |
Features• High purity• Custom sizes available |
Manufacturing Process• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate
• Cleaning and final packaging, Cleaned for use in vacuum, |
Options
• 99.5% minimum purity
• Smaller sizes also available for R&D applications
• Sputtering target bonding service
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Related Products of Tantalum Silicide Sputtering Targets
N/A
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