Aluminum Nitride Ceramic Substrate (AlN)
Aluminum Nitride Ceramic Substrate
Aluminum Nitride (AlN) ceramic substrate has good thermal conductivity, electrical properties, strength, and high-temperature resistance. The AlN substrate with the properties of chemical corrosion resistance, high electrical resistivity, low dielectric loss, non-toxicity, is an excellent substitute material for BeO ceramics. It is mainly used in high-density hybrid circuits, microwave power devices, power electronic devices, optoelectronic components, semiconductor refrigeration, and other products for high-performance substrate materials and packaging materials.
Aluminum Nitride Ceramic Substrate Physical Properties
Material | AlN | ||
---|---|---|---|
Density(g/cm3) | 3.335 g/cm3 | ||
Hardness | 8 (Mohns) | ||
Thermal Conductivity (W/m. K) | 180 | ||
Thermal Expansion (x10-6/oC) | 4.0 ×10-6 | ||
Dielectric Constant (at 1MHZ) | 8.8 | ||
Flexural Strength (N/mm2) | 450 |
Aluminum Nitride Ceramic Substrate Specifications
Size |
100 x 100 x 1.0 mm (customized size are available) |
---|---|
Polish | SSP or DSP |
Surface Roughness (Ra) | 0.01~0.7 um |
Application
Automotive electronics, semiconductor refrigeration devices, LED lighting, power resistorsRelated Products of Aluminum Nitride Ceramic Substrate
Magnetic Ferroelectricity Substrates |
Semiconductor Wafers |
|
GaN Thin Film Substrates |
Halide Substrates |
Ceramic Substrates |
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