Silicon Nitride Ceramic Substrate (Si3N4)
Silicon Nitride Ceramic Substrate
Silicon Nitride (Si3N4) has very high strength, especially for hot-pressed silicon nitride, one of the world's hardest substances. It is exceptionally resistant to high temperatures, and the strength can be maintained to a high temperature of 1200 °C without falling until 1900 °C, it will decompose. We produce the Si3N4 substrates by Hot pressing.
Silicon Nitride Ceramic Substrate Physical Properties
Material | Si3N4 |
---|---|
Structure | M6 |
Method | Hot press |
Density(g/cm3) | 3.2+/-0.02 g/cm3 |
Relative Density | 99.50% |
Hardness | 9.0-9.5(Mohns) |
Melting Point | 1900℃ |
Thermal Conductivity (W/m. K) |
15~ 20W/(m·K) |
Thermal Expansion (x10-6/oC) |
2.8~3.2×10-6/℃(20~1000℃) |
Related Products of Silicon Nitride Ceramic Substrate
Magnetic Ferroelectricity Substrates |
Semiconductor Wafers |
|
GaN Thin Film Substrates |
Halide Substrates |
Ceramic Substrates |
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