Magnesium Aluminate Substrate (MgAl6O10)
Magnesium Aluminate Substrate
Magnesium Aluminate (MgAl6O10) is an excellent substrate film for GaN and ZnO epitaxial film. It has a lower lattice mismatch and thermal expansion mismatch with GaN than MgAl2O4 crystal. Besides, the lower melting point of MgAl6O10 is suitable for growing bigger size and high-quality crystals.
Magnesium Aluminate Substrate Physical Properties
Material | MgAl6O10 |
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Crystal Structure | M3 |
Lattice Constant(A) | a=7.9780 |
Density(g/cm3) | 3.585 g/cm3 |
Thermal Expansivity |
a/6.5 x 10-6 /℃ c/3.7 x 10-6 /℃ |
Magnesium Aluminate Substrate Specifications
Size | 5x5mm, 10x10mm, 15x15mm, 20x20mm, Dia 2'' (maximum size) |
---|---|
Crystal Orientation | <100> <110> <111> |
Polished | SSP or DSP |
Redirection Precision | ±0.5° |
Angle of Crystalline | Special size and orientation are available on demand. |
Ra: | ≤5Å(5µm×5µm) |
Magnesium Aluminate Substrate Package
Packaged with class 100 clean bag or wafer container in a class 1000 clean room.
Related Products of Magnesium Aluminate Substrate
Magnetic Ferroelectricity Substrates |
Semiconductor Wafers |
|
GaN Thin Film Substrates |
Halide Substrates |
Ceramic Substrates |
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