Bismuth Antimony Telluride Sputtering Targets (Bi0.5Sb1.5Te3)
| Material Type | Bismuth Antimony Telluride |
| Symbol | BixSb(2-x)Te3 |
| Color/Appearance | Grey, Solid |
| Melting Point (°C) | N/A |
| Theoretical Density (g/cc) | N/A |
| Water Solubility | Insoluble |
| Sputter | RF, RF-R, DC |
| Type of Bond | Indium, Elastomer |
| Comments |
Bismuth Antimony Telluride Sputtering Targets
Crystals of bismuth antimonides are synthesized by melting bismuth and antimony together under inert gas or vacuum. Zone melting is used to decrease the concentration of impurities. While synthesizing single crystals of bismuth antimonides, impurities must be removed from the samples, as oxidation occurring at the impurities leads to polycrystalline growth.
Bismuth Antimony Telluride Sputtering Targets Information
Bismuth Antimony Sputtering Targets
Purity: 99.99%;
Circular: Diameter <= 14 inch, Thickness >= 1mm;
Block: Length <= 32 inch, Width <= 12 inch, Thickness >= 1mm.
Certificate of Analysis (COA) for 99.99% Purity Bi0.5Sb1.5Te3 Sputtering Target:
More Information on Bismuth Antimony Telluride Sputtering Targets
Applications• Semiconductor• Chemical Vapor Deposition (CVD) • Physical Vapor Deposition (PVD) |
Features• Competitive pricing• High purity • Grain refined, Engineered microstructure • Semiconductor grade |
Manufacturing Process
• Refining |
Options
• 99.99% minimum purity
• Smaller sizes also available for R&D applications
• Sputtering target bonding service
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Evaporation Materials |
Crucibles N/A |
Metal Powders N/A |
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