Titanium Boride Sputtering Targets (TiB2)
| Material Type | Titanium Boride |
| Symbol | TiB2 |
| Melting Point (°C) | 2,900 |
| Theoretical Density (g/cc) | 4.5 |
| Z Ratio | 1.00 |
| Sputter | RF |
|
Max Power Density (Watts/Square Inch) |
20 |
| Type of Bond | Indium, Elastomer |
Titanium Boride Sputtering Targets
TiB2 is a tough ceramic with excellent heat conductivity, oxidation stability, and resistance to mechanical erosion. TiB2 is also a reasonable electrical conductor, so it can be used as a cathode material in aluminum smelting and can be shaped by electrical discharge machining. TiB2 is very similar to titanium carbide, an important base material for cermets, and many of its properties (e.g., hardness, thermal conductivity, electrical conductivity, and oxidation resistance) are superior to those of TiC.
Titanium Boride Sputtering Targets Information
Titanium Boride Sputtering Targets
Purity: 99.5%;
Circular: Diameter <= 14 inch, Thickness >= 1mm;
Block: Length <= 32 inch, Width <= 12 inch, Thickness >= 1mm.
More Information on Titanium Boride Sputtering Targets
Applications• Chemical Vapor Deposition (CVD)• Physical Vapor Deposition (PVD) • Semiconductor • Optical |
Features• High purity• Custom sizes available |
Manufacturing Process• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate
• Cleaning and final packaging, Cleaned for use in vacuum, |
Options
• 99.5% minimum purity
• Smaller sizes also available for R&D applications
• Sputtering target bonding service
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Related Products of Titanium Boride Sputtering Targets
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