Lanthanum Aluminate Substrate (LaAlO3)
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Lanthanum Aluminate Substrate
Lanthanum Aluminate (LaAlO3) is a single crystal, an essential material in industrialization, and a large-size high-temperature superconducting thin film substrate. It can be obtained 2'' diameter and lager single crystal and substrates by Czochralski growth method. It is well-matched with YBaCuO high-temperature superconducting thin film materials in the lattice with lower dielectric constant, low loss microwave. There are significant potential applications in the production of high-temperature superconducting microwave electronic devices.
Lanthanum Aluminate Substrate Physical Properties
Material | LaAlO3 |
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Crystal System | Hexagonal (at room temperature); Cube (>435℃) |
Lattice (A) | Hexagonal a=5.3575, c=13.22; Cubic a=3.821 |
Growth Method | Czochralski |
Hardness | 6-6.5 (Mohns) |
Melting Point | 2080℃ |
Density(g/cm3) | 6.52 g/cm3 |
Thermal Expansion | 9.4 (x 10-6/℃) |
Permittivity | ε = 21 |
Loss Tangent (10ghz) | ~ 3 × 10 -4 @ 300k, ~ 0.6 × 10 -4 @ 77k |
Color and Appearance | Brown-yellow to brown polishing, a substrate with a natural twinned domain by annealing conditions. |
Chemical Stability | Insoluble in Mineral acid at room temperature, soluble in h3po4 when the temperature is higher than 150℃. |
Feature | Suitable for microwave electronics. |
Lanthanum Aluminate Substrate Specifications
Size | 10x3, 10x5, 10x10, 15x15, 20x20,Dia 15, Dia 20, Dia 1'', Dia 2'', Dia 2.6'' |
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Thickness | 0.5 mm, 1.0 mm |
Polished | SSP or DSP |
Orientation | <100>, <110>, <111> |
Redirection Precision | ±0.5° |
Redirection the Edge | 2°(special in 1°) |
Angle of Crystalline | Special size and orientation are available on demand. |
Ra: | ≤5Å(5µm×5µm) |
Lanthanum Aluminate Substrate Package
Packaged with class 100 clean bag or wafer container in a class 1000 clean room.
Related Products of Lanthanum Aluminate Substrate
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Semiconductor Wafers |
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GaN Thin Film Substrates |
Halide Substrates |
Ceramic Substrates |
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