Strontium Lanthanum Aluminate Substrate (LaSrAlO4)
Strontium Lanthanum Aluminate Substrate
Strontium Lanthanum Aluminate (LaSrAlO4) single crystal substrates are growing for the Czochralski method. It has no phase transition from melting temperature to a lower temperature. LaSrO4 crystal has the same structure as YBCO crystal, but It has a lower thermal expansion and expansion coefficient than other perovskite structures. So it can be used to produce films at a lower temperature to improve lattice mismatch and reduce stress.
Strontium Lanthanum Aluminate Substrate Physical Properties
Material | LaSrAlO4 |
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Structure | M4 |
Lattice (A) | a=3.756, c=12.63 |
Growth Method | Czochralski |
Melting Point | 1650℃ |
Density(g/cm3) | 5.92g/cm3 |
Hardness | 6-6.5 (Mohns) |
Permittivity | ε = 16.8 |
Strontium Lanthanum Aluminate Substrate Specifications
Size | 10x3, 10x5, 10x10, 15x15, 20x20,Dia 15 mm, Dia 20 mm, Dia 1'', Dia 2'' |
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Thickness | 0.5 mm, 1.0 mm |
Polished | SSP or DSP |
Orientation | <001> |
Redirection Precision | ±0.5° |
Redirection the Edge | 2°(special in 1°) |
Angle of Crystalline | Special size and orientation are available on demand. |
Ra: | ≤5Å(5µm×5µm) |
Strontium Lanthanum Aluminate Substrate Package
Packaged with class 100 clean bag or wafer container in a class 1000 clean room.
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