Tantalum Nitride Sputtering Targets (TaN)
Material Type | Tantalum Nitride |
Symbol | TaN |
Color/Appearance | Black, Crystalline Solid |
Melting Point (°C) | 3,360 |
Theoretical Density (g/cc) | 16.3 |
Z Ratio | **1.00 |
Sputter | RF, RF-R |
Max Power Density* (Watts/Square Inch) |
20 |
Type of Bond | Indium, Elastomer |
Comments | Evaporate Ta in 10-3 Torr N2. |
Tantalum Nitride Sputtering Targets
Tantalum Nitride Sputtering Targets Information
Tantalum Nitride Sputtering Targets
Purity: 99.5%;
Circular: Diameter <= 14 inch, Thickness >= 1mm;
Block: Length <= 32 inch, Width <= 12 inch, Thickness >= 1mm.
Bonding is recommended for these materials. Many materials have characteristics that are not amenable to sputtering, such as brittleness and low thermal conductivity. This material may require a special ramp up and ramp down procedures. This process may not be necessary for other materials. Targets that have low thermal conductivity are susceptible to thermal shock.
More Information on Tantalum Nitride Sputtering Targets
Applications• Chemical Vapor Deposition (CVD)• Physical Vapor Deposition (PVD) • Semiconductor • Optical |
Features• High purity• Custom sizes available |
Manufacturing Process• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate
• Cleaning and final packaging, Cleaned for use in vacuum, |
Options
• 99.5% minimum purity
• Smaller sizes also available for R&D applications
• Sputtering target bonding service
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Related Products of Tantalum Nitride Sputtering Targets
N/A
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Ceramic Sputtering Targets Tantalum Carbide Sputtering Target |
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Evaporation Materials Tantalum Evaporation Pellet |
Crucibles Tantalum Crucible |
Metal Powders Tantalum Powder |