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IGZO Sputtering Targets (InGaZnO4)

Material Type	Indium Gallium Zinc Oxide
Symbol	IGZO, InGaZnO₄, In₂Ga₂ZnO₇
Color/Appearance	White/Beige/Grey/Green, Solid
Melting Point (°C)	N/A

Theoretical Density (g/cc)	InGaZnO₄ 6.12, In₂Ga₂ZnO₇ 6.5
Z Ratio	N/A
Sputter	RF, DC
Max Power Density* (Watts/Square Inch)
Type of Bond	Indium, Elastomer
Comments

IGZO Sputtering Targets

Indium Gallium Zinc Oxide (IGZO) is a semiconducting material. It consists of Indium (In), Gallium (Ga), Zinc (Zn), and Oxygen (O). High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer. IGZO's advantage over Zinc Oxide is that it can be deposited as a uniform amorphous phase while retaining the high carrier mobility common to oxide semiconductors.

IGZO Sputtering Targets Information

Indium Gallium Zinc Oxide Sputtering Targets
Purity: 99.99%;
Circular: Diameter <= 14 inch, Thickness >= 1 mm;
Block: Length <= 32 inch, Width <= 12 inch, Thickness >= 1 mm.
Relative Density > 90%

More Information on IGZO Sputtering Targets

Applications

• Transparent conductive flim
• Enabling LCDs

• MEMS displays

Features

• High purity
• Custom sizes available

Manufacturing Process

• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate

• Cleaning and final packaging, Cleaned for use in vacuum,
Protection from environmental contaminants
Protection during shipment

Options

• 99.99% minimum purity

• Smaller sizes also available for R&D applications

• Sputtering target bonding service

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