Hafnium Oxide Sputtering Targets (HfO2)
Material Type | Hafnium Oxide |
Symbol | HfO2 |
Color/Appearance | White, Crystalline Solid |
Melting Point (°C) | 2,758 |
Theoretical Density (g/cc) | 9.68 |
Z Ratio | **1.00 |
Sputter | RF, RF-R |
Max Power Density* (Watts/Square Inch) |
20 |
Type of Bond | Indium, Elastomer |
Export Control (ECCN) | 1C231 |
Comments | Film HfO. |
Hafnium Oxide Sputtering Targets
Hafnium Oxide Sputtering Targets Information
Hafnium Oxide Sputtering Targets
Purity: 99.99%;
Circular: Diameter <= 14 inch, Thickness >= 1 mm;
Block: Length <= 32 inch, Width <= 12 inch, Thickness >= 1 mm.
Bonding is recommended for these materials. Many materials have characteristics that are not amenable to sputtering, such as brittleness and low thermal conductivity. This material may require a special ramp up and ramp down procedures. This process may not be necessary for other materials. Targets that have low thermal conductivity are susceptible to thermal shock.
More Information on Hafnium Oxide Sputtering Targets
Applications• Ferroelectric• Gate Dielectric • For CMOS |
Features• High purity• Custom sizes available |
Manufacturing Process• Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate
• Cleaning and final packaging, Cleaned for use in vacuum, |
Options
• 99.99% minimum purity
• Smaller sizes also available for R&D applications
• Sputtering target bonding service
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Related Products of Hafnium Oxide Sputtering Targets
N/A
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Ceramic Sputtering Targets |
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Evaporation Materials |
Crucibles N/A |
Metal Powders |